Vishay Siliconix SQJ912AEP-T2_GE3

DUAL N-CHANNEL 40-V (D-S) 175C M

Manufacturer: Vishay Siliconix
Manufacturer's number: Vishay Siliconix SQJ912AEP-T2_GE3
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 4126
SKU: SQJ912AEP-T2_GE3
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Details

Parameters
Mfr	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Package	Tape & Reel (TR)
Product Status	Obsolete
Technology	MOSFET (Metal Oxide)
Configuration	2 N-Channel (Dual)
FET Feature	-
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Rds On (Max) @ Id, Vgs	9.3mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1835pF @ 20V
Power - Max	48W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8 Dual
Supplier Device Package	PowerPAK® SO-8 Dual
Base Product Number	SQJ912
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	742-SQJ912AEP-T2_GE3TR
Standard Package	3,000

Mosfet Array 40V 30A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8 Dual