Parameters |
Current - Average Rectified (Io) |
10A |
Voltage - Forward (Vf) (Max) @ If |
1.6 V @ 10 A |
Speed |
No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) |
0 ns |
Current - Reverse Leakage @ Vr |
50 µA @ 1200 V |
Capacitance @ Vr, F |
481pF @ 1V, 1MHz |
Mounting Type |
Surface Mount |
Package / Case |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package |
DPAK |
Operating Temperature - Junction |
-55°C ~ 175°C |
Base Product Number |
WNSC2 |
ECCN |
EAR99 |
HTSUS |
8541.10.0080 |
Standard Package |
2,500 |
Mfr |
WeEn Semiconductors |
Series |
- |
Package |
Bulk |
Product Status |
Active |
Technology |
SiC (Silicon Carbide) Schottky |
Voltage - DC Reverse (Vr) (Max) |
1200 V |
Diode 1200 V 10A Surface Mount DPAK