WeEn Semiconductors WNSC2D30650WQ

SILICON CARBIDE SCHOTTKY DI

Manufacturer: WeEn Semiconductors
Manufacturer's number: WeEn Semiconductors WNSC2D30650WQ
Package: Tube
Datasheet: PDF
Stock: 1
SKU: WNSC2D30650WQ
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Details

Parameters
Mfr	WeEn Semiconductors
Series	-
Package	Tube
Product Status	Active
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	650 V
Current - Average Rectified (Io)	30A
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 30 A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	100 µA @ 650 V
Capacitance @ Vr, F	980pF @ 1V, 1MHz
Mounting Type	Through Hole
Package / Case	TO-247-2
Supplier Device Package	TO-247-2
Operating Temperature - Junction	175°C
Base Product Number	WNSC2
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.10.0080
Standard Package	30

Diode 650 V 30A Through Hole TO-247-2