| Parameters |
| Mfr |
WeEn Semiconductors |
| Series |
- |
| Package |
Bulk |
| Product Status |
Active |
| Technology |
SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) |
1200 V |
| Current - Average Rectified (Io) |
40A |
| Voltage - Forward (Vf) (Max) @ If |
1.6 V @ 40 A |
| Speed |
No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) |
0 ns |
| Current - Reverse Leakage @ Vr |
200 µA @ 1200 V |
| Capacitance @ Vr, F |
2068pF @ 1V, 1MHz |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-2 |
| Supplier Device Package |
TO-247-2 |
| Operating Temperature - Junction |
-55°C ~ 175°C |
| Base Product Number |
WNSC2 |
| ECCN |
EAR99 |
| HTSUS |
8541.10.0080 |
| Standard Package |
600 |
Diode 1200 V 40A Through Hole TO-247-2