WeEn Semiconductors WNSC5D08650T6J

DIODE SIL CARBIDE 650V 8A 5DFN

Manufacturer: WeEn Semiconductors
Manufacturer's number: WeEn Semiconductors WNSC5D08650T6J
Package: Tape & Reel (TR)
Datasheet: -
Stock: 1092
SKU: WNSC5D08650T6J
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Details

Parameters
Other Names	1740-WNSC5D08650T6JTR
Standard Package	1
Mfr	WeEn Semiconductors
Series	-
Package	Tape & Reel (TR)
Product Status	Active
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	650 V
Current - Average Rectified (Io)	8A
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 8 A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	40 µA @ 650 V
Capacitance @ Vr, F	267pF @ 1V, 1MHz
Mounting Type	Surface Mount
Package / Case	4-VSFN Exposed Pad
Supplier Device Package	5-DFN (8x8)
Operating Temperature - Junction	-55°C ~ 175°C
Base Product Number	WNSC5
ECCN	EAR99
HTSUS	8541.10.0080

Diode 650 V 8A Surface Mount 5-DFN (8x8)