WeEn Semiconductors WNSC5D10650W6Q

DIODE SIL CARB 650V 10A TO247-2

Manufacturer: WeEn Semiconductors
Manufacturer's number: WeEn Semiconductors WNSC5D10650W6Q
Package: Tube
Datasheet: -
Stock: 2368
SKU: WNSC5D10650W6Q
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Details

Parameters
Mfr	WeEn Semiconductors
Series	-
Package	Tube
Product Status	Active
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	650 V
Current - Average Rectified (Io)	10A
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 10 A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	50 µA @ 650 V
Capacitance @ Vr, F	323pF @ 1V, 1MHz
Mounting Type	Through Hole
Package / Case	TO-247-2
Supplier Device Package	TO-247-2
Operating Temperature - Junction	-55°C ~ 175°C
Base Product Number	WNSC5
ECCN	EAR99
HTSUS	8541.10.0080
Other Names	1740-WNSC5D10650W6Q
Standard Package	1

Diode 650 V 10A Through Hole TO-247-2