WeEn Semiconductors WNSC6D04650Q

DIODE SIL CARB 650V 4A TO220AC

Manufacturer: WeEn Semiconductors
Manufacturer's number: WeEn Semiconductors WNSC6D04650Q
Package: Tube
Datasheet: PDF
Stock: 6732
SKU: WNSC6D04650Q
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Details

Parameters
Mfr	WeEn Semiconductors
Series	-
Package	Tube
Product Status	Active
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	650 V
Current - Average Rectified (Io)	4A
Voltage - Forward (Vf) (Max) @ If	1.4 V @ 4 A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	30 µA @ 650 V
Capacitance @ Vr, F	233pF @ 1V, 1MHz
Mounting Type	Through Hole
Package / Case	TO-220-2
Supplier Device Package	TO-220AC
Operating Temperature - Junction	175°C
Base Product Number	WNSC6
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.10.0080
Other Names	1740-WNSC6D04650Q
Standard Package	50

Diode 650 V 4A Through Hole TO-220AC