| Parameters |
| Mfr |
Wolfspeed, Inc. |
| Series |
- |
| Package |
Box |
| Product Status |
Active |
| Technology |
Silicon Carbide (SiC) |
| Configuration |
2 N-Channel (Half Bridge) |
| FET Feature |
- |
| Drain to Source Voltage (Vdss) |
1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C |
450A (Tc) |
| Rds On (Max) @ Id, Vgs |
3.7mOhm @ 450A, 15V |
| Vgs(th) (Max) @ Id |
3.6V @ 132mA |
| Gate Charge (Qg) (Max) @ Vgs |
1330nC @ 15V |
| Input Capacitance (Ciss) (Max) @ Vds |
38000pF @ 800V |
| Power - Max |
50mW |
| Operating Temperature |
-40°C ~ 175°C (TJ) |
| Mounting Type |
Chassis Mount |
| Package / Case |
Module |
| Supplier Device Package |
- |
| Base Product Number |
EAB450 |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Other Names |
1697-EAB450M12XM3 |
| Standard Package |
1 |
Mosfet Array 1200V (1.2kV) 450A (Tc) 50mW Chassis Mount