Toshiba Semiconductor and Storage 2SC5198-O(S1,E
2SC5198-O(S1,E
- Manufacturer: Toshiba Semiconductor and Storage
- Manufacturer's number: Toshiba Semiconductor and Storage 2SC5198-O(S1,E
- Package: Tube
- Datasheet: PDF
- Stock: 2645
- SKU: 2SC5198-O(S1,E
- Pricing:we created an exceptionally flexible and competitive pricing policy.
| Parameters | |
|---|---|
| Mfr | Toshiba Semiconductor and Storage |
| Series | - |
| Package | Tube |
| Product Status | Active |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 140 V |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 700mA, 7A |
| Current - Collector Cutoff (Max) | 5µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 55 @ 1A, 5V |
| Power - Max | 100 W |
| Frequency - Transition | 30MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Supplier Device Package | TO-3P(N) |
| Base Product Number | 2SC5198 |
| RoHS Status | RoHS Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN | EAR99 |
| HTSUS | 8541.29.0075 |
| Other Names | 2SC5198-O(S1E |
| Standard Package | 25 |
Bipolar (BJT) Transistor NPN 140 V 10 A 30MHz 100 W Through Hole TO-3P(N)