Parameters | |
---|---|
Mfr | Infineon Technologies |
Series | CoolSiC™+ |
Package | Tube |
Product Status | Obsolete |
Technology | SiC (Silicon Carbide) Schottky |
Voltage - DC Reverse (Vr) (Max) | 1200 V |
Current - Average Rectified (Io) | 10A |
Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 10 A |
Speed | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) | 0 ns |
Current - Reverse Leakage @ Vr | 240 µA @ 1200 V |
Capacitance @ Vr, F | 580pF @ 1V, 1MHz |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Supplier Device Package | PG-TO247-3-41 |
Operating Temperature - Junction | -55°C ~ 175°C |
Base Product Number | IDW10S120 |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS | 8541.10.0080 |
Standard Package | 240 |