| Parameters |
| Mfr |
Toshiba Semiconductor and Storage |
| Series |
- |
| Package |
Tape & Reel (TR) |
| Product Status |
Obsolete |
| Technology |
MOSFET (Metal Oxide) |
| Configuration |
2 N-Channel (Dual) |
| FET Feature |
Logic Level Gate |
| Drain to Source Voltage (Vdss) |
60V |
| Current - Continuous Drain (Id) @ 25°C |
200mA |
| Rds On (Max) @ Id, Vgs |
2.1Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
3.1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
- |
| Input Capacitance (Ciss) (Max) @ Vds |
17pF @ 25V |
| Power - Max |
300mW |
| Operating Temperature |
150°C (TJ) |
| Mounting Type |
Surface Mount |
| Package / Case |
6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package |
US6 |
| Base Product Number |
SSM6N7002 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN |
EAR99 |
| HTSUS |
8541.21.0095 |
| Standard Package |
3,000 |
Mosfet Array 60V 200mA 300mW Surface Mount US6