Toshiba Semiconductor and Storage TK10V60W,LVQ - Toshiba Semiconductor and Storage FETs, MOSFETs - BOM, Chip Distributor, Quick Quotation 365day Warranty
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Toshiba Semiconductor and Storage TK10V60W,LVQ

TK10V60W,LVQ

  • Manufacturer: Toshiba Semiconductor and Storage
  • Manufacturer's number: Toshiba Semiconductor and Storage TK10V60W,LVQ
  • Package: Tape & Reel (TR)
  • Datasheet: PDF
  • Stock: 1888
  • SKU: TK10V60W,LVQ
  • Pricing:we created an exceptionally flexible and competitive pricing policy.

Quantity:

Unit Price: $1.6898

Ext Price: $1.6898

Details

Tags

Parameters
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 9.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 380mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id 3.7V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 300 V
FET Feature -
Power Dissipation (Max) 88.3W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 4-DFN-EP (8x8)
Package / Case 4-VSFN Exposed Pad
Base Product Number TK10V60
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 2,500
Mfr Toshiba Semiconductor and Storage
Series DTMOSIV
Package Tape & Reel (TR)
Product Status Active
N-Channel 600 V 9.7A (Ta) 88.3W (Tc) Surface Mount 4-DFN-EP (8x8)