| Parameters |
| Mfr |
Microsemi Corporation |
| Series |
- |
| Package |
Bulk |
| Product Status |
Obsolete |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
200 V |
| Current - Continuous Drain (Id) @ 25°C |
27.4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Rds On (Max) @ Id, Vgs |
100mOhm @ 17A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
115 nC @ 10 V |
| Vgs (Max) |
±20V |
| FET Feature |
- |
| Power Dissipation (Max) |
4W (Ta), 150W (Tc) |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
TO-267AB |
| Package / Case |
TO-267AB |
| RoHS Status |
RoHS non-compliant |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| REACH Status |
REACH Unaffected |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Standard Package |
1 |
N-Channel 200 V 27.4A (Tc) 4W (Ta), 150W (Tc) Surface Mount TO-267AB