STMicroelectronics SCT30N120D2

SCT30N120D2

Manufacturer: STMicroelectronics
Manufacturer's number: STMicroelectronics SCT30N120D2
Package: Tray
Datasheet: -
Stock: 9650
SKU: SCT30N120D2
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Details

Parameters
Mfr	STMicroelectronics
Series	-
Package	Tray
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id	3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	105 nC @ 20 V
Vgs (Max)	+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds	1700 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	270W (Tc)
Operating Temperature	-55°C ~ 200°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	HiP247™
Package / Case	TO-247-3
Base Product Number	SCT30
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	490

N-Channel 1200 V 40A (Tc) 270W (Tc) Through Hole HiP247™