STMicroelectronics STB6NK60Z-1

STB6NK60Z-1

Manufacturer: STMicroelectronics
Manufacturer's number: STMicroelectronics STB6NK60Z-1
Package: Tube
Datasheet: PDF
Stock: 6100
SKU: STB6NK60Z-1
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Unit Price: $0.5533

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Details

Parameters
Mfr	STMicroelectronics
Series	SuperMESH™
Package	Tube
Product Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.2Ohm @ 3A, 10V
Vgs(th) (Max) @ Id	4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	46 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	905 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	110W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I2PAK
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number	STB6NK60
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	497-5955-5
Standard Package	50

N-Channel 600 V 6A (Tc) 110W (Tc) Through Hole I2PAK