| Parameters |
| Mfr |
GeneSiC Semiconductor |
| Series |
- |
| Package |
Bulk |
| Product Status |
Obsolete |
| FET Type |
- |
| Technology |
SiC (Silicon Carbide Junction Transistor) |
| Drain to Source Voltage (Vdss) |
100 V |
| Current - Continuous Drain (Id) @ 25°C |
9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
- |
| Rds On (Max) @ Id, Vgs |
240mOhm @ 5A |
| Vgs(th) (Max) @ Id |
- |
| Vgs (Max) |
- |
| FET Feature |
- |
| Power Dissipation (Max) |
20W (Tc) |
| Operating Temperature |
-55°C ~ 225°C (TJ) |
| Mounting Type |
Through Hole |
| Supplier Device Package |
TO-46 |
| Package / Case |
TO-46-3 |
| RoHS Status |
RoHS Compliant |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Other Names |
1242-1251 |
| Standard Package |
200 |
100 V 9A (Tc) 20W (Tc) Through Hole TO-46