Renesas Electronics America Inc NP82N04NUG-S18-AY

NP82N04NUG-S18-AY

Manufacturer: Renesas Electronics America Inc
Manufacturer's number: Renesas Electronics America Inc NP82N04NUG-S18-AY
Package: Tube
Datasheet: PDF
Stock: 7964
SKU: NP82N04NUG-S18-AY
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Details

Parameters
Mfr	Renesas Electronics America Inc
Series	-
Package	Tube
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	82A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	4.2mOhm @ 41A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	160 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	9750 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	1.8W (Ta), 143W (Tc)
Operating Temperature	175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-262
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Affected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	50

N-Channel 40 V 82A (Tc) 1.8W (Ta), 143W (Tc) Through Hole TO-262