Parameters |
Mfr |
onsemi |
Series |
- |
Package |
Bulk |
Product Status |
Obsolete |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
100 V |
Current - Continuous Drain (Id) @ 25°C |
27A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
4V, 10V |
Rds On (Max) @ Id, Vgs |
77mOhm @ 14A, 10V |
Vgs(th) (Max) @ Id |
- |
Gate Charge (Qg) (Max) @ Vgs |
74 nC @ 10 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
4200 pF @ 20 V |
FET Feature |
- |
Power Dissipation (Max) |
65W (Tc) |
Operating Temperature |
150°C (TA) |
Mounting Type |
Surface Mount |
Supplier Device Package |
TO-263-2 |
Package / Case |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Base Product Number |
2SJ665 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
1 |
P-Channel 100 V 27A (Ta) 65W (Tc) Surface Mount TO-263-2