IXYS IXFH80N65X2

IXFH80N65X2

Manufacturer: IXYS
Manufacturer's number: IXYS IXFH80N65X2
Package: Tube
Datasheet: PDF
Stock: 9267
SKU: IXFH80N65X2
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Unit Price: $14.5800

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Details

Parameters
Mfr	IXYS
Series	HiPerFET™, Ultra X2
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	40mOhm @ 40A, 10V
Vgs(th) (Max) @ Id	5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs	143 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	8245 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	890W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247 (IXTH)
Package / Case	TO-247-3
Base Product Number	IXFH80
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	30

N-Channel 650 V 80A (Tc) 890W (Tc) Through Hole TO-247 (IXTH)