| Parameters |
| Mfr |
Toshiba Semiconductor and Storage |
| Series |
- |
| Package |
Tape & Reel (TR) |
| Product Status |
Active |
| Transistor Type |
NPN |
| Voltage - Collector Emitter Breakdown (Max) |
5.3V |
| Frequency - Transition |
12.5GHz |
| Noise Figure (dB Typ @ f) |
1.45dB @ 1GHz |
| Gain |
11.8dB |
| Power - Max |
800mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
200 @ 30mA, 5V |
| Current - Collector (Ic) (Max) |
100mA |
| Operating Temperature |
150°C (TJ) |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package |
S-Mini |
| Base Product Number |
MT3S113 |
| RoHS Status |
ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN |
EAR99 |
| HTSUS |
8541.21.0075 |
| Standard Package |
3,000 |
RF Transistor NPN 5.3V 100mA 12.5GHz 800mW Surface Mount S-Mini