| Parameters |
| Mfr |
Infineon Technologies |
| Series |
HEXFET® |
| Package |
Tube |
| Product Status |
Discontinued at Digi-Key |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
150 V |
| Current - Continuous Drain (Id) @ 25°C |
86A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Rds On (Max) @ Id, Vgs |
14.7mOhm @ 34A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
110 nC @ 10 V |
| Vgs (Max) |
±20V |
| Input Capacitance (Ciss) (Max) @ Vds |
4460 pF @ 50 V |
| FET Feature |
- |
| Power Dissipation (Max) |
350W (Tc) |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
D2PAK (7-Lead) |
| Package / Case |
TO-263-7, D²Pak (6 Leads + Tab) |
| RoHS Status |
ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| REACH Status |
REACH Unaffected |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Other Names |
SP001568032 |
| Standard Package |
3,000 |
N-Channel 150 V 86A (Tc) 350W (Tc) Surface Mount D2PAK (7-Lead)