| Parameters |
| Mfr |
Infineon Technologies |
| Series |
HEXFET® |
| Package |
Tube |
| Product Status |
Obsolete |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
100 V |
| Current - Continuous Drain (Id) @ 25°C |
17A (Tc) |
| Rds On (Max) @ Id, Vgs |
105mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
34 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds |
800 pF @ 25 V |
| FET Feature |
- |
| Power Dissipation (Max) |
- |
| Operating Temperature |
- |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
D-Pak |
| Package / Case |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| REACH Status |
REACH Unaffected |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Standard Package |
75 |
N-Channel 100 V 17A (Tc) Surface Mount D-Pak