STMicroelectronics STU6N65M2

STU6N65M2

Manufacturer: STMicroelectronics
Manufacturer's number: STMicroelectronics STU6N65M2
Package: Tube
Datasheet: PDF
Stock: 565
SKU: STU6N65M2
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Unit Price: $1.3000

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Details

Parameters
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.35Ohm @ 2A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	9.8 nC @ 10 V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	226 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	60W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-251 (IPAK)
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number	STU6N65
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	75
Mfr	STMicroelectronics
Series	MDmesh™
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V

N-Channel 650 V 4A (Tc) 60W (Tc) Through Hole TO-251 (IPAK)