Toshiba Semiconductor and Storage 2SK3565(Q,M)

2SK3565(Q,M)

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage 2SK3565(Q,M)
Package: Bulk
Datasheet: PDF
Stock: 6887
SKU: 2SK3565(Q,M)
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Details

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	π-MOSIV
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	900 V
Current - Continuous Drain (Id) @ 25°C	5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2.5Ohm @ 3A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	28 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1150 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	45W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220SIS
Package / Case	TO-220-3 Full Pack
Base Product Number	2SK3565
RoHS Status	RoHS Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	50

N-Channel 900 V 5A (Ta) 45W (Tc) Through Hole TO-220SIS