IXYS IXTM40N30

IXTM40N30

Manufacturer: IXYS
Manufacturer's number: IXYS IXTM40N30
Package: Tube
Datasheet: PDF
Stock: 8634
SKU: IXTM40N30
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Details

Parameters
Mfr	IXYS
Series	GigaMOS™
Package	Tube
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	300 V
Current - Continuous Drain (Id) @ 25°C	40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	88mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	220 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4600 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	300W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-204AE
Package / Case	TO-204AE
Base Product Number	IXTM40
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	20

N-Channel 300 V 40A (Tc) 300W (Tc) Through Hole TO-204AE