Parameters |
Mfr |
Toshiba Semiconductor and Storage |
Series |
- |
Package |
Tray |
Product Status |
Active |
Transistor Type |
PNP |
Current - Collector (Ic) (Max) |
15 A |
Voltage - Collector Emitter Breakdown (Max) |
230 V |
Vce Saturation (Max) @ Ib, Ic |
3V @ 800mA, 8A |
Current - Collector Cutoff (Max) |
5µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce |
80 @ 1A, 5V |
Power - Max |
150 W |
Frequency - Transition |
30MHz |
Operating Temperature |
150°C (TJ) |
Mounting Type |
Through Hole |
Package / Case |
TO-3PL |
Supplier Device Package |
TO-3P(L) |
Base Product Number |
2SA1943 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
Not Applicable |
ECCN |
EAR99 |
HTSUS |
8541.29.0075 |
Standard Package |
100 |
Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)