| Parameters |
| Mfr |
Toshiba Semiconductor and Storage |
| Series |
- |
| Package |
Tube |
| Product Status |
Obsolete |
| Transistor Type |
7 NPN Darlington |
| Current - Collector (Ic) (Max) |
500mA |
| Voltage - Collector Emitter Breakdown (Max) |
50V |
| Vce Saturation (Max) @ Ib, Ic |
1.6V @ 500µA, 350mA |
| Current - Collector Cutoff (Max) |
50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
1000 @ 350mA, 2V |
| Power - Max |
1.47W |
| Frequency - Transition |
- |
| Operating Temperature |
-40°C ~ 85°C (TA) |
| Mounting Type |
Through Hole |
| Package / Case |
16-DIP (0.300", 7.62mm) |
| Supplier Device Package |
16-DIP |
| Base Product Number |
ULN2004 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0075 |
| Standard Package |
25 |
Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA 1.47W Through Hole 16-DIP