Parameters |
Drain to Source Voltage (Vdss) |
60 V |
Current - Continuous Drain (Id) @ 25°C |
200mA (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
Rds On (Max) @ Id, Vgs |
5Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id |
3V @ 1mA |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
50 pF @ 25 V |
FET Feature |
- |
Power Dissipation (Max) |
400mW (Ta) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
TO-92-3 |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
Base Product Number |
2N7000 |
Moisture Sensitivity Level (MSL) |
Not Applicable |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.21.0095 |
Standard Package |
1 |
Mfr |
onsemi |
Series |
- |
Package |
Bulk |
Product Status |
Obsolete |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
N-Channel 60 V 200mA (Tc) 400mW (Ta) Through Hole TO-92-3