| Parameters |
| Mfr |
Central Semiconductor Corp |
| Series |
- |
| Package |
Bulk |
| Product Status |
Active |
| FET Type |
N-Channel |
| Voltage - Breakdown (V(BR)GSS) |
35 V |
| Current - Drain (Idss) @ Vds (Vgs=0) |
5 mA @ 15 V |
| Voltage - Cutoff (VGS off) @ Id |
5 V @ 1 µA |
| Input Capacitance (Ciss) (Max) @ Vds |
5pF @ 10V (VGS) |
| Resistance - RDS(On) |
50 Ohms |
| Power - Max |
350 mW |
| Operating Temperature |
-65°C ~ 150°C (TJ) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package |
TO-92-3 |
| RoHS Status |
RoHS non-compliant |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| REACH Status |
REACH Unaffected |
| ECCN |
EAR99 |
| HTSUS |
8541.21.0095 |
| Other Names |
J112CS |
| Standard Package |
1 |
JFET N-Channel 35 V 350 mW Through Hole TO-92-3