Parameters |
Mfr |
Alpha & Omega Semiconductor Inc. |
Series |
aMOS5™ |
Package |
Tube |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
600 V |
Current - Continuous Drain (Id) @ 25°C |
5.3A (Ta), 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
110mOhm @ 19A, 10V |
Vgs(th) (Max) @ Id |
3.6V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
72 nC @ 10 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
4140 pF @ 100 V |
FET Feature |
- |
Power Dissipation (Max) |
8.3W (Ta), 357W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
4-DFN (8x8) |
Package / Case |
4-PowerTSFN |
Base Product Number |
AONV110 |
RoHS Status |
ROHS3 Compliant |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
785-AONV110A60 |
Standard Package |
3,500 |
N-Channel 600 V 5.3A (Ta), 35A (Tc) 8.3W (Ta), 357W (Tc) Surface Mount 4-DFN (8x8)