ANBON SEMICONDUCTOR (INT'L) LIMITED AS1M040120T

N-CHANNEL SILICON CARBIDE POWER

Manufacturer: ANBON SEMICONDUCTOR (INT'L) LIMITED
Manufacturer's number: ANBON SEMICONDUCTOR (INT'L) LIMITED AS1M040120T
Package: Tube
Datasheet: PDF
Stock: 27
SKU: AS1M040120T
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Unit Price: $21.5300

Ext Price: $21.5300

Details

Parameters
Mfr	ANBON SEMICONDUCTOR (INT'L) LIMITED
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	55mOhm @ 40A, 20V
Vgs(th) (Max) @ Id	4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs	142 nC @ 20 V
Vgs (Max)	+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds	2946 pF @ 1000 V
FET Feature	-
Power Dissipation (Max)	330W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-4
Package / Case	TO-247-4
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.21.0095
Other Names	4530-AS1M040120T
Standard Package	30

N-Channel 1200 V 60A (Tc) 330W (Tc) Through Hole TO-247-4