IXYS IXTD2N60P-1J

IXTD2N60P-1J

Manufacturer: IXYS
Manufacturer's number: IXYS IXTD2N60P-1J
Package: Bulk
Datasheet: -
Stock: 4988
SKU: IXTD2N60P-1J
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Details

Parameters
Mfr	IXYS
Series	PolarHV™
Package	Bulk
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	5.1Ohm @ 1A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	7 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	240 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	56W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	Die
Package / Case	Die
Base Product Number	IXTD2N
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	1

N-Channel 600 V 2A (Tc) 56W (Tc) Surface Mount Die