onsemi FCH190N65F-F155

FCH190N65F-F155

Manufacturer: onsemi
Manufacturer's number: onsemi FCH190N65F-F155
Package: Tube
Datasheet: PDF
Stock: 6352
SKU: FCH190N65F-F155
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Details

Parameters
Mfr	onsemi
Series	FRFET®, SuperFET® II
Package	Tube
Product Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	20.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	190mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs	78 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3225 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	208W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-3
Package / Case	TO-247-3
Base Product Number	FCH190
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	Not Applicable
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	450

N-Channel 650 V 20.6A (Tc) 208W (Tc) Through Hole TO-247-3