Cambridge GaN Devices CGD65A055S2-T07

650V GAN HEMT, 55MOHM, DFN8X8. W

Manufacturer: Cambridge GaN Devices
Manufacturer's number: Cambridge GaN Devices CGD65A055S2-T07
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 967
SKU: CGD65A055S2-T07
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Unit Price: $15.8000

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Details

Parameters
Mfr	Cambridge GaN Devices
Series	ICeGaN™
Package	Tape & Reel (TR)
Product Status	Active
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	27A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	12V
Rds On (Max) @ Id, Vgs	77mOhm @ 2.2A, 12V
Vgs(th) (Max) @ Id	4.2V @ 10mA
Gate Charge (Qg) (Max) @ Vgs	6 nC @ 12 V
Vgs (Max)	+20V, -1V
FET Feature	Current Sensing
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	16-DFN (8x8)
Package / Case	16-PowerVDFN
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	3 (168 Hours)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	1,000

650 V 27A (Tc) Surface Mount 16-DFN (8x8)