Cambridge GaN Devices CGD65A130S2-T13

650V GAN HEMT, 130MOHM, DFN8X8.

Manufacturer: Cambridge GaN Devices
Manufacturer's number: Cambridge GaN Devices CGD65A130S2-T13
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 3
SKU: CGD65A130S2-T13
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Unit Price: $6.5600

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Details

Parameters
Mfr	Cambridge GaN Devices
Series	ICeGaN™
Package	Tape & Reel (TR)
Product Status	Active
FET Type	-
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	12V
Rds On (Max) @ Id, Vgs	182mOhm @ 900mA, 12V
Vgs(th) (Max) @ Id	4.2V @ 4.2mA
Gate Charge (Qg) (Max) @ Vgs	2.3 nC @ 12 V
Vgs (Max)	+20V, -1V
FET Feature	Current Sensing
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	16-DFN (8x8)
Package / Case	16-PowerVDFN
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	3 (168 Hours)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	3,500

650 V 12A (Tc) Surface Mount 16-DFN (8x8)