| Parameters |
| Mfr |
Central Semiconductor Corp |
| Series |
- |
| Package |
Bulk |
| Product Status |
Active |
| Transistor Type |
NPN - Darlington |
| Current - Collector (Ic) (Max) |
2 A |
| Voltage - Collector Emitter Breakdown (Max) |
40 V |
| Vce Saturation (Max) @ Ib, Ic |
1.5V @ 2mA, 1A |
| Current - Collector Cutoff (Max) |
100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
25000 @ 200mA, 5V |
| Power - Max |
2 W |
| Frequency - Transition |
1GHz |
| Operating Temperature |
-65°C ~ 150°C (TJ) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-237AA |
| Supplier Device Package |
TO-237 |
| RoHS Status |
ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| REACH Status |
REACH Unaffected |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0075 |
| Standard Package |
2,000 |
Bipolar (BJT) Transistor NPN - Darlington 40 V 2 A 1GHz 2 W Through Hole TO-237