| Parameters |
| Mfr |
Diodes Incorporated |
| Series |
- |
| Package |
Bulk |
| Product Status |
Active |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
100 V |
| Current - Continuous Drain (Id) @ 25°C |
200mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Rds On (Max) @ Id, Vgs |
10Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
2.4V @ 1mA |
| Vgs (Max) |
±20V |
| Input Capacitance (Ciss) (Max) @ Vds |
40 pF @ 25 V |
| FET Feature |
- |
| Power Dissipation (Max) |
625mW (Ta) |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Through Hole |
| Supplier Device Package |
TO-92 |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Base Product Number |
ZVN3310 |
| RoHS Status |
ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| REACH Status |
REACH Unaffected |
| ECCN |
EAR99 |
| HTSUS |
8541.21.0095 |
| Other Names |
ZVN3310A-NDR |
| Standard Package |
4,000 |
N-Channel 100 V 200mA (Ta) 625mW (Ta) Through Hole TO-92