| Parameters |
| Mfr |
CoolCAD |
| Series |
- |
| Package |
Bulk |
| Product Status |
Active |
| FET Type |
N-Channel |
| Technology |
SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) |
1200 V |
| Current - Continuous Drain (Id) @ 25°C |
12A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) |
15V |
| Rds On (Max) @ Id, Vgs |
135mOhm @ 10A, 15V |
| Vgs(th) (Max) @ Id |
3.2V @ 5mA |
| Gate Charge (Qg) (Max) @ Vgs |
40 nC @ 15 V |
| Vgs (Max) |
+15V, -5V |
| Input Capacitance (Ciss) (Max) @ Vds |
1810 pF @ 200 V |
| FET Feature |
Standard |
| Power Dissipation (Max) |
100W (Tc) |
| Operating Temperature |
-40°C ~ 175°C (TJ) |
| Mounting Type |
Through Hole |
| Supplier Device Package |
TO-247 |
| Package / Case |
TO-247-4 |
| RoHS Status |
ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| REACH Status |
REACH Unaffected |
| Other Names |
3892-CC-C2-B15-0322 |
| Standard Package |
5 |
N-Channel 1200 V 12A (Ta) 100W (Tc) Through Hole TO-247