| Parameters |
| Mfr |
Texas Instruments |
| Series |
NexFET™ |
| Package |
Tape & Reel (TR) |
| Product Status |
Active |
| FET Type |
P-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
12 V |
| Current - Continuous Drain (Id) @ 25°C |
2.2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) |
1.5V, 4.5V |
| Rds On (Max) @ Id, Vgs |
53mOhm @ 500mA, 4.5V |
| Vgs(th) (Max) @ Id |
900mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
3.8 nC @ 4.5 V |
| Vgs (Max) |
-6V |
| Input Capacitance (Ciss) (Max) @ Vds |
512 pF @ 6 V |
| FET Feature |
- |
| Power Dissipation (Max) |
1W (Ta) |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
4-DSBGA (1x1) |
| Package / Case |
4-UFBGA, DSBGA |
| Base Product Number |
CSD23202 |
| RoHS Status |
ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| REACH Status |
REACH Unaffected |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Standard Package |
250 |
P-Channel 12 V 2.2A (Ta) 1W (Ta) Surface Mount 4-DSBGA (1x1)