| Parameters |
| Mfr |
Infineon Technologies |
| Series |
HEXFET®, StrongIRFET™ |
| Package |
Tube |
| Product Status |
Obsolete |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
60 V |
| Current - Continuous Drain (Id) @ 25°C |
90A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
6V, 10V |
| Rds On (Max) @ Id, Vgs |
4.8mOhm @ 66A, 10V |
| Vgs(th) (Max) @ Id |
3.7V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs |
130 nC @ 10 V |
| Vgs (Max) |
±20V |
| Input Capacitance (Ciss) (Max) @ Vds |
4360 pF @ 25 V |
| FET Feature |
- |
| Power Dissipation (Max) |
140W (Tc) |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Mounting Type |
Through Hole |
| Supplier Device Package |
IPAK (TO-251AA) |
| Package / Case |
TO-251-3 Short Leads, IPak, TO-251AA |
| Base Product Number |
IRFU7540 |
| RoHS Status |
ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| REACH Status |
REACH Unaffected |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Other Names |
SP001565384 |
| Standard Package |
3,000 |
N-Channel 60 V 90A (Tc) 140W (Tc) Through Hole IPAK (TO-251AA)