STMicroelectronics SCT20N120

SCT20N120

Manufacturer: STMicroelectronics
Manufacturer's number: STMicroelectronics SCT20N120
Package: Tube
Datasheet: PDF
Stock: 127
SKU: SCT20N120
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Unit Price: $17.0800

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Details

Parameters
Mfr	STMicroelectronics
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	290mOhm @ 10A, 20V
Vgs(th) (Max) @ Id	3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	45 nC @ 20 V
Vgs (Max)	+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds	650 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	175W (Tc)
Operating Temperature	-55°C ~ 200°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	HiP247™
Package / Case	TO-247-3
Base Product Number	SCT20
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	497-15170
Standard Package	30

N-Channel 1200 V 20A (Tc) 175W (Tc) Through Hole HiP247™