Diodes Incorporated DMJ65H430SCTI

MOSFET BVDSS: 501V~650V ITO-220A

Manufacturer: Diodes Incorporated
Manufacturer's number: Diodes Incorporated DMJ65H430SCTI
Package: Tube
Datasheet: -
Stock: 1759
SKU: DMJ65H430SCTI
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Details

Parameters
Mfr	Diodes Incorporated
Series	-
Package	Tube
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	430mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	24.5 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	775 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 50W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	ITO220AB-N (Type HE)
Package / Case	TO-220-3 Full Pack, Isolated Tab
Base Product Number	DMJ65
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	31-DMJ65H430SCTI
Standard Package	50

N-Channel 650 V 14A (Tc) 2.5W (Ta), 50W (Tc) Through Hole ITO220AB-N (Type HE)