Diodes Incorporated DMJ70H1D4SJ3

MOSFET BVDSS: 651V~800V TO251 TU

Manufacturer: Diodes Incorporated
Manufacturer's number: Diodes Incorporated DMJ70H1D4SJ3
Package: Tube
Datasheet: PDF
Stock: 5453
SKU: DMJ70H1D4SJ3
Pricing:we created an exceptionally flexible and competitive pricing policy.

Quantity:

Add to RFQ list

Details

Parameters
Mfr	Diodes Incorporated
Series	-
Package	Tube
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	700 V
Current - Continuous Drain (Id) @ 25°C	6.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	9 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	273 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	78W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-251 (Type TH)
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number	DMJ70
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	31-DMJ70H1D4SJ3
Standard Package	75

N-Channel 700 V 6.1A (Tc) 78W (Tc) Through Hole TO-251 (Type TH)