Diodes Incorporated DMJ70H600HCT

MOSFET BVDSS: 651V~800V TO220AB

Manufacturer: Diodes Incorporated
Manufacturer's number: Diodes Incorporated DMJ70H600HCT
Package: Tube
Datasheet: PDF
Stock: 6115
SKU: DMJ70H600HCT
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Details

Parameters
Mfr	Diodes Incorporated
Series	Automotive, AEC-Q101
Package	Tube
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	700 V
Current - Continuous Drain (Id) @ 25°C	8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	600mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17.4 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	570 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	2.3W (Ta), 104W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB (Type TH)
Package / Case	TO-220-3
Base Product Number	DMJ70
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	31-DMJ70H600HCT
Standard Package	50

N-Channel 700 V 8.5A (Tc) 2.3W (Ta), 104W (Tc) Through Hole TO-220AB (Type TH)