Diodes Incorporated DMN2005LP4K-7-52

MOSFET BVDSS: 8V~24V X2-DFN1006-

Manufacturer: Diodes Incorporated
Manufacturer's number: Diodes Incorporated DMN2005LP4K-7-52
Package: Bulk
Datasheet: PDF
Stock: 1757
SKU: DMN2005LP4K-7-52
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Details

Parameters
Mfr	Diodes Incorporated
Series	Automotive, AEC-Q101
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4V
Rds On (Max) @ Id, Vgs	1.5Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id	900mV @ 100µA
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	37.1 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	400mW (Ta)
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	X2-DFN1006-3
Package / Case	3-XFDFN
Base Product Number	DMN2005
ECCN	EAR99
HTSUS	8541.21.0095
Other Names	31-DMN2005LP4K-7-52
Standard Package	3,000

N-Channel 20 V 300mA (Ta) 400mW (Ta) Surface Mount X2-DFN1006-3