Parameters |
Mfr |
Diodes Incorporated |
Series |
- |
Package |
Bulk |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
20 V |
Current - Continuous Drain (Id) @ 25°C |
4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
1.5V, 4.5V |
Rds On (Max) @ Id, Vgs |
38mOhm @ 3.6A, 4.5V |
Vgs(th) (Max) @ Id |
1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
4.3 nC @ 4.5 V |
Vgs (Max) |
±8V |
Input Capacitance (Ciss) (Max) @ Vds |
339 pF @ 10 V |
FET Feature |
- |
Power Dissipation (Max) |
660mW |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
SOT-23-3 |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Base Product Number |
DMN2056 |
ECCN |
EAR99 |
HTSUS |
8541.21.0095 |
Other Names |
31-DMN2056U-7-50 |
Standard Package |
3,000 |
N-Channel 20 V 4A (Ta) 660mW Surface Mount SOT-23-3