Diodes Incorporated DMN2710UFB-7B

MOSFET BVDSS: 8V~24V X1-DFN1006-

Manufacturer: Diodes Incorporated
Manufacturer's number: Diodes Incorporated DMN2710UFB-7B
Package: Bulk
Datasheet: PDF
Stock: 6659
SKU: DMN2710UFB-7B
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Details

Parameters
Mfr	Diodes Incorporated
Series	-
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	450mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	0.6 nC @ 4.5 V
Vgs (Max)	±6V
Input Capacitance (Ciss) (Max) @ Vds	42 pF @ 16 V
FET Feature	-
Power Dissipation (Max)	720mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	X1-DFN1006-3
Package / Case	3-UFDFN
Base Product Number	DMN2710
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	31-DMN2710UFB-7B
Standard Package	10,000

N-Channel 20 V 1.3A (Ta) 720mW (Ta) Surface Mount X1-DFN1006-3