Parameters |
Mfr |
Diodes Incorporated |
Series |
Automotive, AEC-Q101 |
Package |
Bulk |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
60 V |
Current - Continuous Drain (Id) @ 25°C |
410mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
Rds On (Max) @ Id, Vgs |
1.4Ohm @ 40mA, 10V |
Vgs(th) (Max) @ Id |
2.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
2.8 nC @ 10 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
80 pF @ 40 V |
FET Feature |
- |
Power Dissipation (Max) |
470mW (Ta) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
X1-DFN1006-3 |
Package / Case |
3-UFDFN |
Base Product Number |
DMN62 |
ECCN |
EAR99 |
HTSUS |
8541.21.0095 |
Other Names |
31-DMN62D1SFB-7B-52 |
Standard Package |
10,000 |
N-Channel 60 V 410mA (Ta) 470mW (Ta) Surface Mount X1-DFN1006-3