Parameters |
Mfr |
Diodes Incorporated |
Series |
- |
Package |
Bulk |
Product Status |
Active |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
20 V |
Current - Continuous Drain (Id) @ 25°C |
990mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
1.8V, 4.5V |
Rds On (Max) @ Id, Vgs |
750mOhm @ 430mA, 4.5V |
Vgs(th) (Max) @ Id |
1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
0.7 nC @ 4.5 V |
Vgs (Max) |
±6V |
Input Capacitance (Ciss) (Max) @ Vds |
49 pF @ 16 V |
FET Feature |
- |
Power Dissipation (Max) |
550mW (Ta) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
X1-DFN1006-3 |
Package / Case |
3-UFDFN |
Base Product Number |
DMP2900 |
ECCN |
EAR99 |
HTSUS |
8541.21.0095 |
Other Names |
31-DMP2900UFB-7B |
Standard Package |
10,000 |
P-Channel 20 V 990mA (Ta) 550mW (Ta) Surface Mount X1-DFN1006-3