Diodes Incorporated DMT10H032SFVW-7

MOSFET BVDSS: 61V~100V POWERDI33

Manufacturer: Diodes Incorporated
Manufacturer's number: Diodes Incorporated DMT10H032SFVW-7
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 8007
SKU: DMT10H032SFVW-7
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Details

Parameters
Mfr	Diodes Incorporated
Series	-
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	32mOhm @ 7A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	544 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	1.3W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount, Wettable Flank
Supplier Device Package	PowerDI3333-8 (SWP) Type UX
Package / Case	8-PowerVDFN
Base Product Number	DMT10
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	31-DMT10H032SFVW-7TR
Standard Package	2,000

N-Channel 100 V 35A (Tc) 1.3W (Ta) Surface Mount, Wettable Flank PowerDI3333-8 (SWP) Type UX